2SK2013 2002-09-02 1 toshiba field effect transistor silicon n channel mos type 2SK2013 audio frequency power amplifier application high breakdown voltage : v dss = 180v high forward transfer admittance : |y fs | = 0.7 s (typ.) complementary to 2sj313 maximum ratings (ta = 25c) characteristics symbol rating unit drain ? source voltage v dss 180 v gate ? source voltage v gss 20 v drain current (note 1) i d 1 a drain power dissipation (tc = 25c) p d 25 w channel temperature t ch 150 c storage temperature range t stg ? 55~150 c marking electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v ds = 0, v gs = 20 v ? ? 100 na drain ? source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 180 ? ? v gate ? source cut ? off voltage (note 2) v gs (off) v ds = 10 v, i d = 10 ma 1.8 ? 2.8 v drain ? source saturation voltage v ds (on) i d = 0.6 a, v gs = 10 v ? 1.7 3.0 v forward transfer admittance |y fs | v ds = 10 v, i d = 0.3 a ? 0.7 ? s input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 170 ? output capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 45 ? reverse transfer capacitance c rss v dd 10 v, v gs = 0, f = 1 mhz ? 17 ? pf note 1: please use devices on condition that the channel temperature is below 150c. note 2: v gs (off) classification o: 0.8~1.6, y: 1.4~2.8 this transistor is the electrostatic sensitive device. please handle with caution. unit: mm jedec D jeita sc ? 67 toshiba 2-10r1b weight: 1.9 g (typ.)
2SK2013 2002-09-02 2
2SK2013 2002-09-02 3 switching time test circuit waveforms
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